Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry
Identifieur interne : 012107 ( Main/Repository ); précédent : 012106; suivant : 012108Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry
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Abstract
We examine the use of spectroscopic ellipsometry (SE) for fully automated, in situ real-time control of the barrier thickness for resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE). The RTDs in this study utilize AlAs barriers, an InGaAs well with an InAs subwell, and lattice-matched InGaAs spacer layers, grown on an InP(100) substrate. Pseudodielectric functions for the strained AlAs barriers were generated from SE data acquired during MBE growth, using simultaneous photoemission oscillation measurements for in situ thickness calibration. For closed-loop control, the measured dielectric functions were utilized in conjunction with a virtual substrate model to derive the instantaneous layer thickness from real-time SE data. Repeatability was tested by growing several series of AlAs barriers and complete RTDs under fully automated control, with shutter actuation based on the real-time thickness determined from SE. The results show that by using SE for real-time control, barrier thickness repeatability on the order of ±0.1 ML can be achieved. © 2000 American Vacuum Society.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry</title><author><name sortKey="Roth, J A" uniqKey="Roth J">J. A. Roth</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>The J. A. Woollam Company, Inc., Lincoln, Nebraska 68508</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>The J. A. Woollam Company, Inc., Lincoln</wicri:cityArea></affiliation></author><author><name sortKey="Williamson, W S" uniqKey="Williamson W">W. S. Williamson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Chow, D H" uniqKey="Chow D">D. H. Chow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Olson, G L" uniqKey="Olson G">G. L. Olson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Johs, B" uniqKey="Johs B">B. Johs</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>HRL Laboratories, LLC, Malibu, California 90265</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>HRL Laboratories, LLC, Malibu</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0245790</idno><date when="2000-05">2000-05</date><idno type="stanalyst">PASCAL 00-0245790 AIP</idno><idno type="RBID">Pascal:00-0245790</idno><idno type="wicri:Area/Main/Corpus">013088</idno><idno type="wicri:Area/Main/Repository">012107</idno></publicationStmt><seriesStmt><idno type="ISSN">1071-1023</idno><title level="j" type="abbreviated">J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</title><title level="j" type="main">Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Ellipsometry</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Measuring methods</term><term>Molecular beam epitaxy</term><term>Resonant tunneling diodes</term><term>Semiconductor growth</term><term>Thickness control</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530K</term><term>8530M</term><term>0760F</term><term>8115H</term><term>7361E</term><term>8105E</term><term>Etude expérimentale</term><term>Méthode mesure</term><term>Diode effet tunnel résonnant</term><term>Ellipsométrie</term><term>Epitaxie jet moléculaire</term><term>Croissance semiconducteur</term><term>Contrôle épaisseur</term><term>Aluminium composé</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We examine the use of spectroscopic ellipsometry (SE) for fully automated, in situ real-time control of the barrier thickness for resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE). The RTDs in this study utilize AlAs barriers, an InGaAs well with an InAs subwell, and lattice-matched InGaAs spacer layers, grown on an InP(100) substrate. Pseudodielectric functions for the strained AlAs barriers were generated from SE data acquired during MBE growth, using simultaneous photoemission oscillation measurements for in situ thickness calibration. For closed-loop control, the measured dielectric functions were utilized in conjunction with a virtual substrate model to derive the instantaneous layer thickness from real-time SE data. Repeatability was tested by growing several series of AlAs barriers and complete RTDs under fully automated control, with shutter actuation based on the real-time thickness determined from SE. The results show that by using SE for real-time control, barrier thickness repeatability on the order of ±0.1 ML can be achieved. © 2000 American Vacuum Society.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1071-1023</s0></fA01><fA02 i1="01"><s0>JVTBD9</s0></fA02><fA03 i2="1"><s0>J. vac. sci. technol., B., Microelectron. nanometer struct. process. meas. phenom.</s0></fA03><fA05><s2>18</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Closed-loop control of resonant tunneling diode barrier thickness using in situ spectroscopic ellipsometry</s1></fA08><fA11 i1="01" i2="1"><s1>ROTH (J. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>WILLIAMSON (W. S.)</s1></fA11><fA11 i1="03" i2="1"><s1>CHOW (D. H.)</s1></fA11><fA11 i1="04" i2="1"><s1>OLSON (G. 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Processing, measurement and phenomena</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We examine the use of spectroscopic ellipsometry (SE) for fully automated, in situ real-time control of the barrier thickness for resonant tunneling diodes (RTDs) grown by molecular-beam epitaxy (MBE). The RTDs in this study utilize AlAs barriers, an InGaAs well with an InAs subwell, and lattice-matched InGaAs spacer layers, grown on an InP(100) substrate. Pseudodielectric functions for the strained AlAs barriers were generated from SE data acquired during MBE growth, using simultaneous photoemission oscillation measurements for in situ thickness calibration. For closed-loop control, the measured dielectric functions were utilized in conjunction with a virtual substrate model to derive the instantaneous layer thickness from real-time SE data. Repeatability was tested by growing several series of AlAs barriers and complete RTDs under fully automated control, with shutter actuation based on the real-time thickness determined from SE. 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